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Other articles related with "electron confinement"：
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107301 |
Tie-Cheng Han(韩铁成), Hong-Dong Zhao(赵红东), Lei Yang(杨磊), Yang Wang(王杨) |
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Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier |
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Chin. Phys. B
2017 Vol.26 (10): 107301-107301
[Abstract]
(699)
[HTML 1 KB]
[PDF 349 KB]
(606)
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17302 |
Deng Xiao-Chuan (邓小川), Sun He (孙鹤), Rao Cheng-Yuan (饶成元), Zhang Bo (张波) |
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High-power SiC MESFET using dual p-buffer layer for S-band power amplifier |
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Chin. Phys. B
2013 Vol.22 (1): 17302-017302
[Abstract]
(997)
[HTML 0 KB]
[PDF 407 KB]
(732)
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